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Infineon Technologies BSB104N08NP3GXUSA1

Name: BSB104N08NP3GXUSA1
Brand: Infineon Technologies
SKU: BSB104N08NP3GXUSA1
Price: 0.5268 USD
Availability: InStock
Rating: 4.9 (638 reviews)

MFG Part Number: BSB104N08NP3GXUSA1

Available Quantity: 48060 Pieces

Reference Price: USD 0.5268

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: OptiMOS™ MOSFET N-CH 80V 13A 2WDSON

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: BSB104N08NP3GXUSA1.pdf

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BSB104N08NP3GXUSA1 Specifications

Manufacturer Part Number	BSB104N08NP3GXUSA1
Future Part Number	FT-BSB104N08NP3GXUSA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	OptiMOS™
BSB104N08NP3GXUSA1 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	10.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs	31nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2100pF @ 40V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 42W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	MG-WDSON-2, CanPAK M™
Package / Case	3-WDSON
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
BSB104N08NP3GXUSA1 Weight	Contact Us
Replacement Part Number	BSB104N08NP3GXUSA1-FT

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