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Infineon Technologies BSB056N10NN3GXUMA1

Name: BSB056N10NN3GXUMA1
Brand: Infineon Technologies
SKU: BSB056N10NN3GXUMA1
Price: 1.248952 USD
Availability: InStock
Rating: 4.7 (443 reviews)

MFG Part Number: BSB056N10NN3GXUMA1

Available Quantity: 12310 Pieces

Reference Price: USD 1.248952

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: OptiMOS™ MOSFET N-CH 100V 9A WDSON-2

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: BSB056N10NN3GXUMA1.pdf

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BSB056N10NN3GXUMA1 Specifications

Manufacturer Part Number	BSB056N10NN3GXUMA1
Future Part Number	FT-BSB056N10NN3GXUMA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	OptiMOS™
BSB056N10NN3GXUMA1 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	9A (Ta), 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	5.6 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	74nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5500pF @ 50V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 78W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	MG-WDSON-2, CanPAK M™
Package / Case	3-WDSON
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
BSB056N10NN3GXUMA1 Weight	Contact Us
Replacement Part Number	BSB056N10NN3GXUMA1-FT

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