Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / BLW96/01,112
Manufacturer Part Number | BLW96/01,112 |
---|---|
Future Part Number | FT-BLW96/01,112 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BLW96/01,112 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 55V |
Frequency - Transition | 235MHz |
Noise Figure (dB Typ @ f) | - |
Gain | - |
Power - Max | 340W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 7A, 5V |
Current - Collector (Ic) (Max) | 12A |
Operating Temperature | 200°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-121B |
Supplier Device Package | CRFM4 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BLW96/01,112 Weight | Contact Us |
Replacement Part Number | BLW96/01,112-FT |
BFG67,235
NXP USA Inc.
BFG67/X,215
NXP USA Inc.
BFG92A/X,215
NXP USA Inc.
BFG93A,215
NXP USA Inc.
BFG93A/X,215
NXP USA Inc.
BFP 182 E7764
Infineon Technologies
BFP 196R E6327
Infineon Technologies
BFP 196R E6501
Infineon Technologies
NE67739-A
CEL
NE67739-T1-A
CEL
A40MX04-VQ80I
Microsemi Corporation
EPF10K20TC144-4
Intel
A42MX24-PQG208A
Microsemi Corporation
LFE5UM-45F-6BG381C
Lattice Semiconductor Corporation
10M08DCF256I7G
Intel
EP2AGX125DF25C5NES
Intel
10AX032E4F27E3LG
Intel
LFEC6E-4F256I
Lattice Semiconductor Corporation
LFE3-35EA-9FN672C
Lattice Semiconductor Corporation
10AX090N1F45I1SG
Intel