Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / BFU660F,115
Manufacturer Part Number | BFU660F,115 |
---|---|
Future Part Number | FT-BFU660F,115 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BFU660F,115 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 5.5V |
Frequency - Transition | 21GHz |
Noise Figure (dB Typ @ f) | 0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz |
Gain | 12dB ~ 21dB |
Power - Max | 225mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 10mA, 2V |
Current - Collector (Ic) (Max) | 60mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-343F |
Supplier Device Package | 4-DFP |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BFU660F,115 Weight | Contact Us |
Replacement Part Number | BFU660F,115-FT |
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