Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / BFG135AE6327XT
Manufacturer Part Number | BFG135AE6327XT |
---|---|
Future Part Number | FT-BFG135AE6327XT |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BFG135AE6327XT Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 15V |
Frequency - Transition | 6GHz |
Noise Figure (dB Typ @ f) | 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz |
Gain | 9dB ~ 14dB |
Power - Max | 1W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 100mA, 8V |
Current - Collector (Ic) (Max) | 150mA |
Operating Temperature | - |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Supplier Device Package | PG-SOT223-4 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BFG135AE6327XT Weight | Contact Us |
Replacement Part Number | BFG135AE6327XT-FT |
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