Manufacturer Part Number | BDV65B |
---|---|
Future Part Number | FT-BDV65B |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BDV65B Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 10A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 2V @ 20mA, 5A |
Current - Collector Cutoff (Max) | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 4V |
Power - Max | 125W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-218-3 |
Supplier Device Package | SOT-93 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BDV65B Weight | Contact Us |
Replacement Part Number | BDV65B-FT |
2SC3902S
ON Semiconductor
2SC3902T
ON Semiconductor
2SD1683S
ON Semiconductor
2SD1683T
ON Semiconductor
2SD1685F
ON Semiconductor
2SD1685G
ON Semiconductor
AML2002
ON Semiconductor
MJ15024G
ON Semiconductor
MJ21194G
ON Semiconductor
MJ21193G
ON Semiconductor
M2GL050T-FCSG325
Microsemi Corporation
A42MX36-1CQ256
Microsemi Corporation
5SGXEA3K1F40C2N
Intel
EP4SE360H29C3N
Intel
10AX032E3F27E2LG
Intel
10AX022E4F29I3LG
Intel
XA7A35T-1CPG236Q
Xilinx Inc.
LCMXO2-2000ZE-2FTG256I
Lattice Semiconductor Corporation
EP3SE110F780C2N
Intel
EP3SL110F780I4L
Intel