Manufacturer Part Number | BD676G |
---|---|
Future Part Number | FT-BD676G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BD676G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Darlington |
Current - Collector (Ic) (Max) | 4A |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Vce Saturation (Max) @ Ib, Ic | 2.5V @ 30mA, 1.5A |
Current - Collector Cutoff (Max) | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A, 3V |
Power - Max | 40W |
Frequency - Transition | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-225AA, TO-126-3 |
Supplier Device Package | TO-225AA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BD676G Weight | Contact Us |
Replacement Part Number | BD676G-FT |
2SB14460SA
Panasonic Electronic Components
2SC43910RA
Panasonic Electronic Components
2SC54190RA
Panasonic Electronic Components
2SD1994ARA
Panasonic Electronic Components
2SD1994ASA
Panasonic Electronic Components
2SD20670RA
Panasonic Electronic Components
2SD217700A
Panasonic Electronic Components
2SD21770SA
Panasonic Electronic Components
2SD2177A0A
Panasonic Electronic Components
2SD21790RA
Panasonic Electronic Components
EPF10K10ATC144-3N
Intel
XC2S150-6FG456C
Xilinx Inc.
LFE2-12SE-5QN208C
Lattice Semiconductor Corporation
A3P250-2FGG256I
Microsemi Corporation
M7A3P1000-1FGG256
Microsemi Corporation
ICE65L08F-TCB132I
Lattice Semiconductor Corporation
EP4CE15E22I7N
Intel
LFE3-95EA-6LFN672I
Lattice Semiconductor Corporation
EP4CE30F29C6N
Intel
EP20K1000CF33C8N
Intel