Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / BD13716S
Manufacturer Part Number | BD13716S |
---|---|
Future Part Number | FT-BD13716S |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BD13716S Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 1.5A |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
Power - Max | 1.25W |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-225AA, TO-126-3 |
Supplier Device Package | TO-126-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BD13716S Weight | Contact Us |
Replacement Part Number | BD13716S-FT |
TN6715A
ON Semiconductor
TN6716A
ON Semiconductor
TN6717A
ON Semiconductor
TN6718A
ON Semiconductor
TN6719A
ON Semiconductor
TN6725A
ON Semiconductor
TN6726A
ON Semiconductor
TN6727A
ON Semiconductor
TN6728A
ON Semiconductor
TN6729A
ON Semiconductor
AT6010A-4AC
Microchip Technology
XCVU095-2FFVD1517I
Xilinx Inc.
M1A3P600-2FGG484
Microsemi Corporation
AGL600V2-FGG256
Microsemi Corporation
AT40K20LV-3EQC
Microchip Technology
AT6005-4AC
Microchip Technology
EP4CGX75CF23C6
Intel
EP2SGX60EF1152C3N
Intel
A42MX24-3TQG176I
Microsemi Corporation
10AX027E1F27E1HG
Intel