Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / BCY59VIII
Manufacturer Part Number | BCY59VIII |
---|---|
Future Part Number | FT-BCY59VIII |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BCY59VIII Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 200mA |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Vce Saturation (Max) @ Ib, Ic | 700mV @ 2.5mA, 100mA |
Current - Collector Cutoff (Max) | 10nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA, 5V |
Power - Max | 390mW |
Frequency - Transition | 200MHz |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package | TO-18 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BCY59VIII Weight | Contact Us |
Replacement Part Number | BCY59VIII-FT |
MMBT3904L RFG
Taiwan Semiconductor Corporation
BC847B RFG
Taiwan Semiconductor Corporation
MMBT2222A RFG
Taiwan Semiconductor Corporation
BC846B RFG
Taiwan Semiconductor Corporation
BC807-16 RFG
Taiwan Semiconductor Corporation
BC807-25 RFG
Taiwan Semiconductor Corporation
BC807-40 RFG
Taiwan Semiconductor Corporation
BC817-16 RFG
Taiwan Semiconductor Corporation
BC817-25 RFG
Taiwan Semiconductor Corporation
BC817-40 RFG
Taiwan Semiconductor Corporation
XC4003E-4PQ100I
Xilinx Inc.
XC6SLX150-N3FGG676C
Xilinx Inc.
XC7A50T-1CSG325C
Xilinx Inc.
EP1S25F672C7N
Intel
10AX027H3F34I2LG
Intel
5SGXEA7H3F35C2LN
Intel
5SGSMD5H3F35C2LN
Intel
EP3SL150F1152C3N
Intel
XC5VLX110T-2FFG1738I
Xilinx Inc.
LFE2M35E-6FN484I
Lattice Semiconductor Corporation