Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / BCV27E6327HTSA1
Manufacturer Part Number | BCV27E6327HTSA1 |
---|---|
Future Part Number | FT-BCV27E6327HTSA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BCV27E6327HTSA1 Status (Lifecycle) | In Stock |
Part Status | Last Time Buy |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 100µA, 100mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA, 5V |
Power - Max | 360mW |
Frequency - Transition | 170MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BCV27E6327HTSA1 Weight | Contact Us |
Replacement Part Number | BCV27E6327HTSA1-FT |
BC 846A E6433
Infineon Technologies
BC 846B B5003
Infineon Technologies
BC 846B E6327
Infineon Technologies
BC 846B E6433
Infineon Technologies
BC 847B B5003
Infineon Technologies
BC 847C B5003
Infineon Technologies
BC 848C B6327
Infineon Technologies
BC 850B B5003
Infineon Technologies
BC 850BF E6327
Infineon Technologies
BC 850C B5003
Infineon Technologies
XC6VLX75T-L1FFG484I
Xilinx Inc.
AGLN125V2-ZCSG81
Microsemi Corporation
P1AFS1500-2FGG484I
Microsemi Corporation
LFE2-70SE-6F900I
Lattice Semiconductor Corporation
EPF10K250EFC672-2
Intel
5SGSED8K2F40I3N
Intel
5SGXMB5R1F43I2N
Intel
A40MX04-PL84M
Microsemi Corporation
AGL250V2-FGG144T
Microsemi Corporation
LFE2-50SE-6F484C
Lattice Semiconductor Corporation