Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / BCR 191L3 E6327
Manufacturer Part Number | BCR 191L3 E6327 |
---|---|
Future Part Number | FT-BCR 191L3 E6327 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BCR 191L3 E6327 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 22 kOhms |
Resistor - Emitter Base (R2) | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | PG-TSLP-3-4 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BCR 191L3 E6327 Weight | Contact Us |
Replacement Part Number | BCR 191L3 E6327-FT |
PDTA124TMB,315
Nexperia USA Inc.
PDTA124XMB,315
Nexperia USA Inc.
PDTA143TMB,315
Nexperia USA Inc.
PDTA143XMB,315
Nexperia USA Inc.
PDTA143ZMB,315
Nexperia USA Inc.
PDTA144EMB,315
Nexperia USA Inc.
PDTA144TMB,315
Nexperia USA Inc.
PDTA144VMB,315
Nexperia USA Inc.
PDTA144WMB,315
Nexperia USA Inc.
PDTC114EMB,315
Nexperia USA Inc.
XCV300E-7FG456C
Xilinx Inc.
A3P600-2FGG484
Microsemi Corporation
EP4CGX50CF23C8
Intel
5SGSMD4E1H29C1N
Intel
10CL006YE144I7G
Intel
5SGXMA7N3F45I3N
Intel
A1020B-2PLG44C
Microsemi Corporation
LFE2-50SE-6F484C
Lattice Semiconductor Corporation
LCMXO2-2000ZE-3BG256C
Lattice Semiconductor Corporation
LCMXO2-1200HC-5MG132I
Lattice Semiconductor Corporation