Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / BCR 116L3 E6327
Manufacturer Part Number | BCR 116L3 E6327 |
---|---|
Future Part Number | FT-BCR 116L3 E6327 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BCR 116L3 E6327 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 150MHz |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | PG-TSLP-3-4 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BCR 116L3 E6327 Weight | Contact Us |
Replacement Part Number | BCR 116L3 E6327-FT |
PDTC124TE,115
NXP USA Inc.
PDTC124XE,115
NXP USA Inc.
PDTC143EE,115
NXP USA Inc.
PDTC143TE,115
NXP USA Inc.
PDTC143XE,115
NXP USA Inc.
PDTC143ZE,115
NXP USA Inc.
PDTC144EE,115
NXP USA Inc.
PDTC144EE,135
NXP USA Inc.
PDTC144TE,115
NXP USA Inc.
PDTC144VE,115
NXP USA Inc.
A1225A-1PQ100I
Microsemi Corporation
XC3SD1800A-5CSG484C
Xilinx Inc.
XC3S1400A-4FG676C
Xilinx Inc.
MPF300TL-FCVG484E
Microsemi Corporation
EPF10K50EFC484-2
Intel
A40MX04-3PL44I
Microsemi Corporation
LFEC1E-3QN208I
Lattice Semiconductor Corporation
LFE2-50E-7FN672C
Lattice Semiconductor Corporation
5AGXBB7D4F35C4N
Intel
EP1C20F324C7N
Intel