Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / BCR112WH6327XTSA1
Manufacturer Part Number | BCR112WH6327XTSA1 |
---|---|
Future Part Number | FT-BCR112WH6327XTSA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BCR112WH6327XTSA1 Status (Lifecycle) | In Stock |
Part Status | Last Time Buy |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 140MHz |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | PG-SOT323-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BCR112WH6327XTSA1 Weight | Contact Us |
Replacement Part Number | BCR112WH6327XTSA1-FT |
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