Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / BCR 108T E6327
Manufacturer Part Number | BCR 108T E6327 |
---|---|
Future Part Number | FT-BCR 108T E6327 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BCR 108T E6327 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 170MHz |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | SC-75, SOT-416 |
Supplier Device Package | PG-SC-75 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BCR 108T E6327 Weight | Contact Us |
Replacement Part Number | BCR 108T E6327-FT |
PDTB114EQAZ
Nexperia USA Inc.
PDTB123EQAZ
Nexperia USA Inc.
PDTB123YQAZ
Nexperia USA Inc.
PDTB143EQAZ
Nexperia USA Inc.
PDTB143XQAZ
Nexperia USA Inc.
PDTC114EQAZ
Nexperia USA Inc.
PDTC114YQAZ
Nexperia USA Inc.
PDTC123JQAZ
Nexperia USA Inc.
PDTC124EQAZ
Nexperia USA Inc.
PDTC143EQAZ
Nexperia USA Inc.
LCMXO2-1200HC-4TG144C
Lattice Semiconductor Corporation
LCMXO256C-5T100C
Lattice Semiconductor Corporation
AX500-FGG484
Microsemi Corporation
APA750-PQG208A
Microsemi Corporation
M2GL005S-1VFG400I
Microsemi Corporation
M1AGL250V2-VQG100I
Microsemi Corporation
AT40K10-2DQC
Microchip Technology
EP1S20B672C6
Intel
XC5VLX110-1FFG1760CES
Xilinx Inc.
10AX066K2F40I2LG
Intel