Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / BCP5516H6327XTSA1
Manufacturer Part Number | BCP5516H6327XTSA1 |
---|---|
Future Part Number | FT-BCP5516H6327XTSA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BCP5516H6327XTSA1 Status (Lifecycle) | In Stock |
Part Status | Last Time Buy |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
Power - Max | 2W |
Frequency - Transition | 100MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Supplier Device Package | PG-SOT223-4 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BCP5516H6327XTSA1 Weight | Contact Us |
Replacement Part Number | BCP5516H6327XTSA1-FT |
BCX56-TP
Micro Commercial Co
MMBT3904T-TP
Micro Commercial Co
BC847AT-7
Diodes Incorporated
BC847AT-TP
Micro Commercial Co
BC847BT-TP
Micro Commercial Co
BC847CT-TP
Micro Commercial Co
MMBT2222AT-TP
Micro Commercial Co
MMBT2907AT-TP
Micro Commercial Co
MMBT3906T-TP
Micro Commercial Co
MMBT2222AT-7
Diodes Incorporated
A54SX32A-FTQ144
Microsemi Corporation
LCMXO2280E-3TN100I
Lattice Semiconductor Corporation
LCMXO1200E-4FT256C
Lattice Semiconductor Corporation
EP2AGZ300HF40I4N
Intel
EP3SE260H780C3N
Intel
5SGXEA4H1F35I2N
Intel
XC5VSX35T-2FF665I
Xilinx Inc.
M2GL060TS-1FGG676
Microsemi Corporation
LFE2-70E-6F672C
Lattice Semiconductor Corporation
LCMXO2-7000HE-5BG332I
Lattice Semiconductor Corporation