Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / BC858BL3E6327
Manufacturer Part Number | BC858BL3E6327 |
---|---|
Future Part Number | FT-BC858BL3E6327 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BC858BL3E6327 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max) | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
Power - Max | 250mW |
Frequency - Transition | 250MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BC858BL3E6327 Weight | Contact Us |
Replacement Part Number | BC858BL3E6327-FT |
BC 808-25 E6327
Infineon Technologies
BC 808-25 E6433
Infineon Technologies
BC 808-40 B6327
Infineon Technologies
BC 808-40 E6327
Infineon Technologies
BC 817-16 B5003
Infineon Technologies
BC 817-16 E6327
Infineon Technologies
BC 817-16 E6433
Infineon Technologies
BC 817-25 B5003
Infineon Technologies
BC 817-25 E6327
Infineon Technologies
BC 817-25 E6433
Infineon Technologies
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