Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / BC857CE6327HTSA1
Manufacturer Part Number | BC857CE6327HTSA1 |
---|---|
Future Part Number | FT-BC857CE6327HTSA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BC857CE6327HTSA1 Status (Lifecycle) | In Stock |
Part Status | Last Time Buy |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max) | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
Power - Max | 330mW |
Frequency - Transition | 250MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BC857CE6327HTSA1 Weight | Contact Us |
Replacement Part Number | BC857CE6327HTSA1-FT |
MJF47
ON Semiconductor
MJF6388
ON Semiconductor
MJF6668
ON Semiconductor
MJF6668G
ON Semiconductor
ST1802FH
STMicroelectronics
TTC009,F(J
Toshiba Semiconductor and Storage
TTC009,F(M
Toshiba Semiconductor and Storage
APT13005TF-G1
Diodes Incorporated
APT13005T-G1
Diodes Incorporated
APT13005DT-G1
Diodes Incorporated