Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / BC857BHZGT116
Manufacturer Part Number | BC857BHZGT116 |
---|---|
Future Part Number | FT-BC857BHZGT116 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
BC857BHZGT116 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max) | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 210 @ 2mA, 5V |
Power - Max | 200mW |
Frequency - Transition | 250MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SST3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BC857BHZGT116 Weight | Contact Us |
Replacement Part Number | BC857BHZGT116-FT |
2SA1900T100Q
Rohm Semiconductor
2SAR293PT100
Rohm Semiconductor
2SAR513PT100
Rohm Semiconductor
2SAR514PT100
Rohm Semiconductor
2SAR533PT100
Rohm Semiconductor
2SAR552PT100
Rohm Semiconductor
2SAR553PT100
Rohm Semiconductor
2SAR554PT100
Rohm Semiconductor
2SB1132T100P
Rohm Semiconductor
2SB1132T100Q
Rohm Semiconductor
A54SX16A-2FG256I
Microsemi Corporation
LCMXO640E-3FTN256I
Lattice Semiconductor Corporation
EP2C50F672C7N
Intel
EP3C5U256C7
Intel
5SGXEA9N3F45C2N
Intel
XC7VX485T-3FFG1157E
Xilinx Inc.
XC2V8000-5FFG1152I
Xilinx Inc.
LCMXO3L-9400E-5BG256C
Lattice Semiconductor Corporation
EP3SL50F780C3
Intel
EP1C4F400I7N
Intel