Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / BC856B/DG/B3,215
Manufacturer Part Number | BC856B/DG/B3,215 |
---|---|
Future Part Number | FT-BC856B/DG/B3,215 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BC856B/DG/B3,215 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 65V |
Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max) | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 2mA, 5V |
Power - Max | 250mW |
Frequency - Transition | 100MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | TO-236AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BC856B/DG/B3,215 Weight | Contact Us |
Replacement Part Number | BC856B/DG/B3,215-FT |
2SB892T-AE
ON Semiconductor
2SC2334(13)-S6-AZ
Renesas Electronics America
2SC3665-Y(T2NSW,FM
Toshiba Semiconductor and Storage
2SC3665-Y,T2F(J
Toshiba Semiconductor and Storage
2SC3665-Y,T2NSF(J
Toshiba Semiconductor and Storage
2SC3665-Y,T2YNSF(J
Toshiba Semiconductor and Storage
2SC3668-O,T2CLAF(J
Toshiba Semiconductor and Storage
2SC3668-Y,F2PANF(J
Toshiba Semiconductor and Storage
2SC3668-Y,T2F(J
Toshiba Semiconductor and Storage
2SC3668-Y,T2F(M
Toshiba Semiconductor and Storage
EPF10K10ATC144-1N
Intel
XC3S400-5FTG256C
Xilinx Inc.
A3PE600-PQG208I
Microsemi Corporation
M1A3PE3000-PQG208I
Microsemi Corporation
LCMXO3L-4300C-6BG324I
Lattice Semiconductor Corporation
10M04SFE144C8G
Intel
5AGXMA3D4F27C5N
Intel
A42MX16-PL84A
Microsemi Corporation
ICE40LP1K-CM81TR1K
Lattice Semiconductor Corporation
10AX048E2F29E1HG
Intel