Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / BC637RL1G
Manufacturer Part Number | BC637RL1G |
---|---|
Future Part Number | FT-BC637RL1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BC637RL1G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
Power - Max | 625mW |
Frequency - Transition | 200MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package | TO-92-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BC637RL1G Weight | Contact Us |
Replacement Part Number | BC637RL1G-FT |
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