Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / BC517_D27Z
Manufacturer Part Number | BC517_D27Z |
---|---|
Future Part Number | FT-BC517_D27Z |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BC517_D27Z Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 1.2A |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 100µA, 100mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30000 @ 20mA, 2V |
Power - Max | 625mW |
Frequency - Transition | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package | TO-92-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BC517_D27Z Weight | Contact Us |
Replacement Part Number | BC517_D27Z-FT |
BC327-16ZL1G
ON Semiconductor
BC327-25RL1
ON Semiconductor
BC327-25RL1G
ON Semiconductor
BC327-25ZL1
ON Semiconductor
BC327-25ZL1G
ON Semiconductor
BC327-40ZL1G
ON Semiconductor
BC32716TA
ON Semiconductor
BC32716TAR
ON Semiconductor
BC32716TF
ON Semiconductor
BC32716TFR
ON Semiconductor
XA7A100T-1FGG484I
Xilinx Inc.
A3PE600-1FG484I
Microsemi Corporation
EP4CE10F17C8LN
Intel
5SGXEA4H2F35C1N
Intel
EP3SE110F1152C2N
Intel
XCS10XL-5PC84C
Xilinx Inc.
XC4VLX25-11FFG676I
Xilinx Inc.
M2GL060T-FGG676
Microsemi Corporation
LFE3-70E-6FN1156C
Lattice Semiconductor Corporation
EP1S60B956C7
Intel