Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Arrays / BAS40-06/DG/B2,215
Manufacturer Part Number | BAS40-06/DG/B2,215 |
---|---|
Future Part Number | FT-BAS40-06/DG/B2,215 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
BAS40-06/DG/B2,215 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Diode Configuration | 1 Pair Common Anode |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 40V |
Current - Average Rectified (Io) (per Diode) | 120mA (DC) |
Voltage - Forward (Vf) (Max) @ If | 1V @ 40mA |
Speed | Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 10µA @ 40V |
Operating Temperature - Junction | 150°C (Max) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | TO-236AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BAS40-06/DG/B2,215 Weight | Contact Us |
Replacement Part Number | BAS40-06/DG/B2,215-FT |
MBR200100CTR
GeneSiC Semiconductor
MBR200150CT
GeneSiC Semiconductor
MBR200150CTR
GeneSiC Semiconductor
MBR200200CT
GeneSiC Semiconductor
MBR200200CTR
GeneSiC Semiconductor
MBR20020CT
GeneSiC Semiconductor
MBR20020CTR
GeneSiC Semiconductor
MBR20035CT
GeneSiC Semiconductor
MBR20035CTR
GeneSiC Semiconductor
MBR20040CT
GeneSiC Semiconductor
LCMXO1200C-4T144C
Lattice Semiconductor Corporation
XC6SLX75T-2FG484I
Xilinx Inc.
AGL600V5-FGG256
Microsemi Corporation
A54SX72A-1CQ208M
Microsemi Corporation
LCMXO3L-9400C-6BG484C
Lattice Semiconductor Corporation
EP2S15F484C4
Intel
10M40DCF256C7G
Intel
5SGXEB5R2F43I2L
Intel
5SGXEA4H2F35I2N
Intel
EP4SGX230DF29C3NES
Intel