Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / BAS21-HE3-18
Manufacturer Part Number | BAS21-HE3-18 |
---|---|
Future Part Number | FT-BAS21-HE3-18 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
BAS21-HE3-18 Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 200V |
Current - Average Rectified (Io) | 200mA |
Voltage - Forward (Vf) (Max) @ If | 1.25V @ 200mA |
Speed | Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr) | 50ns |
Current - Reverse Leakage @ Vr | 100nA @ 200V |
Capacitance @ Vr, F | 5pF @ 0V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23 |
Operating Temperature - Junction | -55°C ~ 150°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BAS21-HE3-18 Weight | Contact Us |
Replacement Part Number | BAS21-HE3-18-FT |
VS-45EPS16LHM3
Vishay Semiconductor Diodes Division
VS-65EPF12LHM3
Vishay Semiconductor Diodes Division
VS-65EPS16LHM3
Vishay Semiconductor Diodes Division
VS-E5PH3012L-N3
Vishay Semiconductor Diodes Division
VS-EPU3006L-N3
Vishay Semiconductor Diodes Division
VS-EPU6006LHN3
Vishay Semiconductor Diodes Division
VS-45EPS12LHM3
Vishay Semiconductor Diodes Division
VS-E5PH6012L-N3
Vishay Semiconductor Diodes Division
VS-65EPF06LHM3
Vishay Semiconductor Diodes Division
VS-E5PX6012L-N3
Vishay Semiconductor Diodes Division
XC7S25-1FTGB196C
Xilinx Inc.
APA075-PQ208I
Microsemi Corporation
EP2S60F484I4N
Intel
10M25SAE144C8G
Intel
XC4008E-1PC84C
Xilinx Inc.
XC7VX980T-1FFG1930I
Xilinx Inc.
A54SX16A-TQG100
Microsemi Corporation
LCMXO3LF-1300E-6MG121I
Lattice Semiconductor Corporation
10AX115R2F40E2SG
Intel
EPF10K30ABC356-4
Intel