Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / AT-42010
Manufacturer Part Number | AT-42010 |
---|---|
Future Part Number | FT-AT-42010 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
AT-42010 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 8GHz |
Noise Figure (dB Typ @ f) | 1.9dB ~ 3dB @ 2GHz ~ 4GHz |
Gain | 10dB ~ 13.5dB |
Power - Max | 600mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 35mA, 8V |
Current - Collector (Ic) (Max) | 80mA |
Operating Temperature | 200°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 4-SMD (100 mil) |
Supplier Device Package | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
AT-42010 Weight | Contact Us |
Replacement Part Number | AT-42010-FT |
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