Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / AT-42010
Manufacturer Part Number | AT-42010 |
---|---|
Future Part Number | FT-AT-42010 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
AT-42010 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 8GHz |
Noise Figure (dB Typ @ f) | 1.9dB ~ 3dB @ 2GHz ~ 4GHz |
Gain | 10dB ~ 13.5dB |
Power - Max | 600mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 35mA, 8V |
Current - Collector (Ic) (Max) | 80mA |
Operating Temperature | 200°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 4-SMD (100 mil) |
Supplier Device Package | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
AT-42010 Weight | Contact Us |
Replacement Part Number | AT-42010-FT |
23A008
Microsemi Corporation
2731-200P
Microsemi Corporation
2A5
Microsemi Corporation
2N2857UB
Microsemi Corporation
2N4957
Microsemi Corporation
2N5031
Microsemi Corporation
2SC3356-T1B-R24-A
CEL
2SC3356-T1B-R25-A
CEL
2SC3357-T1-RF-A
CEL
2SC4227-T1-R34-A
CEL
A54SX32A-2FG144
Microsemi Corporation
A1010B-2PLG68C
Microsemi Corporation
5CGXFC9D6F27C7N
Intel
EP4SGX290FH29C3
Intel
5SGSED8N1F45I2N
Intel
5SGSED8N3F45I3N
Intel
5SGXEA9K2H40C3N
Intel
LFE3-70EA-7LFN484C
Lattice Semiconductor Corporation
5CEBA9F31C7N
Intel
5AGTMD3G3F31I3N
Intel