Home / Products / Integrated Circuits (ICs) / Memory / AS7C325632-10BINTR
Manufacturer Part Number | AS7C325632-10BINTR |
---|---|
Future Part Number | FT-AS7C325632-10BINTR |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
AS7C325632-10BINTR Status (Lifecycle) | In Stock |
Part Status | Active |
Memory Type | Volatile |
Memory Format | SRAM |
Technology | SRAM - Asynchronous |
Memory Size | 8Mb (1M x 8) |
Clock Frequency | - |
Write Cycle Time - Word, Page | 10ns |
Access Time | 10ns |
Memory Interface | Parallel |
Voltage - Supply | 2.7V ~ 3.6V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 90-TFBGA |
Supplier Device Package | 90-TFBGA (8x13) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
AS7C325632-10BINTR Weight | Contact Us |
Replacement Part Number | AS7C325632-10BINTR-FT |
MT41K1G4DA-107:P TR
Micron Technology Inc.
MT41K256M8DA-107 AAT:K
Micron Technology Inc.
MT41K256M8DA-107 AAT:K TR
Micron Technology Inc.
MT41K256M8DA-107:K TR
Micron Technology Inc.
MT41K256M8DA-125 AUT:K
Micron Technology Inc.
MT41K256M8DA-125 AUT:K TR
Micron Technology Inc.
MT41K256M8DA-125 IT:K TR
Micron Technology Inc.
MT41K512M8DA-107 AAT:P
Micron Technology Inc.
MT41K512M8DA-107 AAT:P TR
Micron Technology Inc.
MT41K512M8DA-107 AIT:P TR
Micron Technology Inc.
XA2S200E-6FT256Q
Xilinx Inc.
APA450-FG484
Microsemi Corporation
APA1000-PQG208M
Microsemi Corporation
LCMXO3L-6900C-5BG400C
Lattice Semiconductor Corporation
5SGSED8K3F40C2L
Intel
10CL025YE144I7G
Intel
XC7VX690T-2FFG1927I
Xilinx Inc.
5AGXBB5D4F35C5N
Intel
EP3SL150F780C2N
Intel
EPF10K200SBC356-3
Intel