Home / Products / Integrated Circuits (ICs) / Memory / AS6C4016-55BIN
Manufacturer Part Number | AS6C4016-55BIN |
---|---|
Future Part Number | FT-AS6C4016-55BIN |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
AS6C4016-55BIN Status (Lifecycle) | In Stock |
Part Status | Active |
Memory Type | Volatile |
Memory Format | SRAM |
Technology | SRAM - Asynchronous |
Memory Size | 4Mb (256K x 16) |
Clock Frequency | - |
Write Cycle Time - Word, Page | 55ns |
Access Time | 55ns |
Memory Interface | Parallel |
Voltage - Supply | 2.7V ~ 5.5V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 48-LFBGA |
Supplier Device Package | 48-TFBGA (6x8) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
AS6C4016-55BIN Weight | Contact Us |
Replacement Part Number | AS6C4016-55BIN-FT |
AT45DB021D-SH-B
Microchip Technology
AT45DB021D-SH-T
Microchip Technology
AT45DB041B-SC
Microchip Technology
AT45DB041B-SC-2.5
Microchip Technology
AT45DB041B-SI
Microchip Technology
AT45DB041B-SI-2.5
Microchip Technology
AT45DB041B-SU
Microchip Technology
AT45DB161D-SU
Microchip Technology
AT45DB321D-SU-2.5
Microchip Technology
AT93C56AW-10SU-2.7
Microchip Technology
A3PN020-QNG68
Microsemi Corporation
LCMXO640E-4TN100C
Lattice Semiconductor Corporation
XC3S200AN-4FTG256C
Xilinx Inc.
XCV812E-6FG900C
Xilinx Inc.
XC7A50T-2CS325I
Xilinx Inc.
5CEBA9F27C7N
Intel
5SGXEA5H1F35I2N
Intel
LFE2-35SE-5FN672C
Lattice Semiconductor Corporation
5AGXMA3D4F31I3G
Intel
EPF10K30AQC208-1N
Intel