Home / Products / Integrated Circuits (ICs) / Memory / AS6C3216-55BIN
Manufacturer Part Number | AS6C3216-55BIN |
---|---|
Future Part Number | FT-AS6C3216-55BIN |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
AS6C3216-55BIN Status (Lifecycle) | In Stock |
Part Status | Active |
Memory Type | Volatile |
Memory Format | SRAM |
Technology | SRAM - Asynchronous |
Memory Size | 32Mb (2M x 16) |
Clock Frequency | - |
Write Cycle Time - Word, Page | 55ns |
Access Time | 55ns |
Memory Interface | Parallel |
Voltage - Supply | 2.7V ~ 3.6V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 48-LFBGA |
Supplier Device Package | 48-TFBGA (8x10) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
AS6C3216-55BIN Weight | Contact Us |
Replacement Part Number | AS6C3216-55BIN-FT |
AT45DB011B-SU
Microchip Technology
AT45DB021B-SC
Microchip Technology
AT45DB021B-SI
Microchip Technology
AT45DB021B-SU
Microchip Technology
AT45DB021D-SH-B
Microchip Technology
AT45DB021D-SH-T
Microchip Technology
AT45DB041B-SC
Microchip Technology
AT45DB041B-SC-2.5
Microchip Technology
AT45DB041B-SI
Microchip Technology
AT45DB041B-SI-2.5
Microchip Technology
LFXP3E-3TN144C
Lattice Semiconductor Corporation
XC2S15-5VQG100C
Xilinx Inc.
M2GL090-1FGG484
Microsemi Corporation
AFS250-2FG256I
Microsemi Corporation
ICE5LP2K-CM36ITR1K
Lattice Semiconductor Corporation
5SGSED6K3F40C2LN
Intel
LFEC10E-5FN256C
Lattice Semiconductor Corporation
LFE2M50SE-7FN484C
Lattice Semiconductor Corporation
LCMXO640C-4BN256I
Lattice Semiconductor Corporation
10AX066N2F40E2SG
Intel