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Microsemi Corporation APTM100DA18CT1G

MFG Part Number
APTM100DA18CT1G
Available Quantity
58210 Pieces
Reference Price
USD 0
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Microsemi Corporation
Brief Description
POWER MOS 8™ MOSFET N-CH 1000V 40A SP1
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
APTM100DA18CT1G.pdf
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APTM100DA18CT1G Specifications

Manufacturer Part Number APTM100DA18CT1G
Future Part Number FT-APTM100DA18CT1G
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series POWER MOS 8™
APTM100DA18CT1G Status (Lifecycle) In Stock
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 216 mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 570nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 14800pF @ 25V
FET Feature -
Power Dissipation (Max) 657W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SP1
Package / Case SP1
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
APTM100DA18CT1G Weight Contact Us
Replacement Part Number APTM100DA18CT1G-FT

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