Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / APT25GP90BDQ1G
Manufacturer Part Number | APT25GP90BDQ1G |
---|---|
Future Part Number | FT-APT25GP90BDQ1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | POWER MOS 7® |
APT25GP90BDQ1G Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
IGBT Type | PT |
Voltage - Collector Emitter Breakdown (Max) | 900V |
Current - Collector (Ic) (Max) | 72A |
Current - Collector Pulsed (Icm) | 110A |
Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 25A |
Power - Max | 417W |
Switching Energy | 370µJ (off) |
Input Type | Standard |
Gate Charge | 110nC |
Td (on/off) @ 25°C | 13ns/55ns |
Test Condition | 600V, 40A, 4.3 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 [B] |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
APT25GP90BDQ1G Weight | Contact Us |
Replacement Part Number | APT25GP90BDQ1G-FT |
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