Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / APT102GA60B2
Manufacturer Part Number | APT102GA60B2 |
---|---|
Future Part Number | FT-APT102GA60B2 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | POWER MOS 8™ |
APT102GA60B2 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
IGBT Type | PT |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 183A |
Current - Collector Pulsed (Icm) | 307A |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 62A |
Power - Max | 780W |
Switching Energy | 1.354mJ (on), 1.614mJ (off) |
Input Type | Standard |
Gate Charge | 294nC |
Td (on/off) @ 25°C | 28ns/212ns |
Test Condition | 400V, 62A, 4.7 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 Variant |
Supplier Device Package | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
APT102GA60B2 Weight | Contact Us |
Replacement Part Number | APT102GA60B2-FT |
APT50GS60BRDQ2G
Microsemi Corporation
APT60GT60BRG
Microsemi Corporation
APT40GT60BRG
Microsemi Corporation
APT30GT60BRDQ2G
Microsemi Corporation
APT25GR120B
Microsemi Corporation
APT50GT120B2RG
Microsemi Corporation
APT25GT120BRG
Microsemi Corporation
APT25GT120BRDQ2G
Microsemi Corporation
APT27GA90BD15
Microsemi Corporation
APT25GR120BD15
Microsemi Corporation