Manufacturer Part Number | AOW4S60 |
---|---|
Future Part Number | FT-AOW4S60 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | aMOS™ |
AOW4S60 Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 900 mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id | 4.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 263pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 83W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-262 |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
AOW4S60 Weight | Contact Us |
Replacement Part Number | AOW4S60-FT |
ZVP0545GTC
Diodes Incorporated
ZVP2106GTC
Diodes Incorporated
ZVP2110GTC
Diodes Incorporated
ZVP2120GTC
Diodes Incorporated
ZVP4424GTC
Diodes Incorporated
ZVP4525GTC
Diodes Incorporated
ZXM62N03GTA
Diodes Incorporated
ZXM62P03GTA
Diodes Incorporated
ZXM64N035GTA
Diodes Incorporated
ZXM64P035GTA
Diodes Incorporated
XC3S200A-4FT256I
Xilinx Inc.
XC3S2000-4FG456C
Xilinx Inc.
A42MX09-VQ100I
Microsemi Corporation
AGL030V5-VQ100I
Microsemi Corporation
EP2C50F672I8
Intel
XC6SLX4-2CSG225I
Xilinx Inc.
AGL600V2-CSG281
Microsemi Corporation
LFXP6C-3Q208C
Lattice Semiconductor Corporation
LFXP2-40E-6F484I
Lattice Semiconductor Corporation
EP3SL50F780C4
Intel