Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / AOV11S60
Manufacturer Part Number | AOV11S60 |
---|---|
Future Part Number | FT-AOV11S60 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | aMOS™ |
AOV11S60 Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 650mA (Ta), 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 500 mOhm @ 3.8A, 10V |
Vgs(th) (Max) @ Id | 4.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 545pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 8.3W (Ta), 156W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-DFN-EP (8x8) |
Package / Case | 4-PowerTSFN |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
AOV11S60 Weight | Contact Us |
Replacement Part Number | AOV11S60-FT |
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