Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / AO4435L_101
Manufacturer Part Number | AO4435L_101 |
---|---|
Future Part Number | FT-AO4435L_101 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
AO4435L_101 Status (Lifecycle) | In Stock |
Part Status | Last Time Buy |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 10.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 20V |
Rds On (Max) @ Id, Vgs | 14 mOhm @ 11A, 20V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 3.1W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOIC |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
AO4435L_101 Weight | Contact Us |
Replacement Part Number | AO4435L_101-FT |
2SK3483(0)-Z-E1-AZ
Renesas Electronics America
2SK3484(0)-Z-E1-AZ
Renesas Electronics America
2SK3703-1EX
ON Semiconductor
2SK3755-AZ
Renesas Electronics America
2SK3793-AZ
Renesas Electronics America
2SK3813(0)-Z-E1-AZ
Renesas Electronics America
2SK3813-Z-E1-AZ
Renesas Electronics America
2SK3814(0)-Z-E1-AZ
Renesas Electronics America
2SK3814(0)-Z-E2-AZ
Renesas Electronics America
2SK3814(01)-Z-E1-AZ
Renesas Electronics America
XC2VP4-6FGG256C
Xilinx Inc.
XC4052XL-3HQ304C
Xilinx Inc.
XC2V250-6FGG456C
Xilinx Inc.
M1A3P600-1FGG484
Microsemi Corporation
A42MX36-PQ208I
Microsemi Corporation
M2GL090TS-1FGG676I
Microsemi Corporation
LFEC10E-4QN208I
Lattice Semiconductor Corporation
EP1K100QC208-3N
Intel
EP4SGX180FF35C2XN
Intel
EP1SGX25DF1020C6
Intel