Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / AO3416L_102
Manufacturer Part Number | AO3416L_102 |
---|---|
Future Part Number | FT-AO3416L_102 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
AO3416L_102 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 22 mOhm @ 6.5A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 1160pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 1.4W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
AO3416L_102 Weight | Contact Us |
Replacement Part Number | AO3416L_102-FT |
2SK1070PIETR-E
Renesas Electronics America
2SK2225-E
Renesas Electronics America
2SK2376(Q)
Toshiba Semiconductor and Storage
2SK3132(Q)
Toshiba Semiconductor and Storage
2SK3309(Q)
Toshiba Semiconductor and Storage
2SK3353(0)-Z-E1-AZ
Renesas Electronics America
2SK3353-AZ
Renesas Electronics America
2SK3353-Z-E1-AZ
Renesas Electronics America
2SK3367(01)-Z-E1-AZ
Renesas Electronics America
2SK3377(0)-Z-E1-AZ
Renesas Electronics America