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A2G35S200-01SR3 Image

NXP USA Inc. A2G35S200-01SR3

MFG Part Number
A2G35S200-01SR3
Available Quantity
38160 Pieces
Reference Price
USD 98.748672
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
NXP USA Inc.
Brief Description
- AIRFAST RF POWER GAN TRANSISTOR
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - RF
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
A2G35S200-01SR3.pdf
A2G35S200-01SR3 Image

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A2G35S200-01SR3 Specifications

Manufacturer Part Number A2G35S200-01SR3
Future Part Number FT-A2G35S200-01SR3
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series -
A2G35S200-01SR3 Status (Lifecycle) In Stock
Part Status Active
Transistor Type LDMOS
Frequency 3.4GHz ~ 3.6GHz
Gain 16.1dB
Voltage - Test 48V
Current Rating -
Noise Figure -
Current - Test 291mA
Power - Output 180W
Voltage - Rated 125V
Package / Case NI-400S-2S
Supplier Device Package NI-400S-2S
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
A2G35S200-01SR3 Weight Contact Us
Replacement Part Number A2G35S200-01SR3-FT

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