Home / Products / Integrated Circuits (ICs) / Memory / 6116SA90TDB
Manufacturer Part Number | 6116SA90TDB |
---|---|
Future Part Number | FT-6116SA90TDB |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
6116SA90TDB Status (Lifecycle) | In Stock |
Part Status | Active |
Memory Type | Volatile |
Memory Format | SRAM |
Technology | SRAM - Asynchronous |
Memory Size | 16Kb (2K x 8) |
Clock Frequency | - |
Write Cycle Time - Word, Page | 90ns |
Access Time | 90ns |
Memory Interface | Parallel |
Voltage - Supply | 4.5V ~ 5.5V |
Operating Temperature | -55°C ~ 125°C (TA) |
Mounting Type | Through Hole |
Package / Case | 24-CDIP (0.300", 7.62mm) |
Supplier Device Package | 24-CDIP |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
6116SA90TDB Weight | Contact Us |
Replacement Part Number | 6116SA90TDB-FT |
MX29LV040CT2I-90G
Macronix
MX29LV400CBXBC-70G
Macronix
MX29LV400CBXBC-90G
Macronix
MX29LV400CBXBI-90G
Macronix
MX29LV400CTXBC-70G
Macronix
MX29LV400CTXBC-90G
Macronix
MX29LV400CTXBI-90G
Macronix
MX29LV800CBXGI-70G
Macronix
MX29LV800CTXGI-70G
Macronix
MX35LF1GE4AB-Z2I
Macronix
XA3S1600E-4FG400I
Xilinx Inc.
XA3S250E-4VQG100I
Xilinx Inc.
M2GL090T-FCSG325I
Microsemi Corporation
EP4CE15F17A7N
Intel
ICE40LM2K-CM36
Lattice Semiconductor Corporation
LFEC10E-3QN208I
Lattice Semiconductor Corporation
LFE3-150EA-7LFN1156C
Lattice Semiconductor Corporation
LCMXO640E-4M100C
Lattice Semiconductor Corporation
EP3SE50F780I3N
Intel
EP2AGZ300FF35I4N
Intel