Home / Products / Integrated Circuits (ICs) / Memory / 6116SA20TDB
Manufacturer Part Number | 6116SA20TDB |
---|---|
Future Part Number | FT-6116SA20TDB |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
6116SA20TDB Status (Lifecycle) | In Stock |
Part Status | Active |
Memory Type | Volatile |
Memory Format | SRAM |
Technology | SRAM - Asynchronous |
Memory Size | 16Kb (2K x 8) |
Clock Frequency | - |
Write Cycle Time - Word, Page | 20ns |
Access Time | 20ns |
Memory Interface | Parallel |
Voltage - Supply | 4.5V ~ 5.5V |
Operating Temperature | -55°C ~ 125°C (TA) |
Mounting Type | Through Hole |
Package / Case | 24-CDIP (0.300", 7.62mm) |
Supplier Device Package | 24-CDIP |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
6116SA20TDB Weight | Contact Us |
Replacement Part Number | 6116SA20TDB-FT |
MX29F040CTC-70G
Macronix
MX29F040CTC-90G
Macronix
MX29F200CBMC-70G
Macronix
MX29F200CBMC-90G
Macronix
MX29GL256FDXGI-11G
Macronix
MX29GL256FUXGI-11G
Macronix
MX29LV040CT2I-90G
Macronix
MX29LV400CBXBC-70G
Macronix
MX29LV400CBXBC-90G
Macronix
MX29LV400CBXBI-90G
Macronix
A54SX08A-PQG208A
Microsemi Corporation
M1AGL250V5-VQ100I
Microsemi Corporation
EP4CE40F23C8N
Intel
5AGXMA5D4F27I5N
Intel
XC7V585T-2FF1761I
Xilinx Inc.
LFE5U-12F-8BG256I
Lattice Semiconductor Corporation
5CEFA2F23I7N
Intel
10AX090R2F40E2SG
Intel
EP4CGX110DF31C8
Intel
EP2S180F1508C5
Intel