Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / 55GN01CA-TB-E
Manufacturer Part Number | 55GN01CA-TB-E |
---|---|
Future Part Number | FT-55GN01CA-TB-E |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
55GN01CA-TB-E Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 10V |
Frequency - Transition | 4.5GHz |
Noise Figure (dB Typ @ f) | 1.9dB @ 1GHz |
Gain | 9.5dB |
Power - Max | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
Current - Collector (Ic) (Max) | 70mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | 3-CP |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
55GN01CA-TB-E Weight | Contact Us |
Replacement Part Number | 55GN01CA-TB-E-FT |
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