Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / 3N163-E3
Manufacturer Part Number | 3N163-E3 |
---|---|
Future Part Number | FT-3N163-E3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
3N163-E3 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 50mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Rds On (Max) @ Id, Vgs | 250 Ohm @ 100µA, 20V |
Vgs(th) (Max) @ Id | 5V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 3.5pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 375mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-72 |
Package / Case | TO-206AF, TO-72-4 Metal Can |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
3N163-E3 Weight | Contact Us |
Replacement Part Number | 3N163-E3-FT |
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