Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2STR1160
Manufacturer Part Number | 2STR1160 |
---|---|
Future Part Number | FT-2STR1160 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2STR1160 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 430mV @ 100mA, 1A |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 500mA, 2V |
Power - Max | 500mW |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2STR1160 Weight | Contact Us |
Replacement Part Number | 2STR1160-FT |
BC546B A1G
Taiwan Semiconductor Corporation
BC546C A1G
Taiwan Semiconductor Corporation
BC547A A1G
Taiwan Semiconductor Corporation
BC547B A1G
Taiwan Semiconductor Corporation
BC547C A1G
Taiwan Semiconductor Corporation
BC548A A1G
Taiwan Semiconductor Corporation
BC548B A1G
Taiwan Semiconductor Corporation
BC548C A1G
Taiwan Semiconductor Corporation
BC549A A1G
Taiwan Semiconductor Corporation
BC549B A1G
Taiwan Semiconductor Corporation
LCMXO2-2000HE-5TG144C
Lattice Semiconductor Corporation
XA3S1600E-4FGG484I
Xilinx Inc.
M2GL005-1VF400I
Microsemi Corporation
LCMXO640E-3FTN256C
Lattice Semiconductor Corporation
EP3SE50F484C2
Intel
EP4CE6E22C8N
Intel
LFE2-50E-5F672I
Lattice Semiconductor Corporation
LCMXO2280E-4FTN324I
Lattice Semiconductor Corporation
5AGXMB3G6F35C6N
Intel
EP4CE30F29I7N
Intel