Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / 2SK1518-E
Manufacturer Part Number | 2SK1518-E |
---|---|
Future Part Number | FT-2SK1518-E |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2SK1518-E Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 270 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 3050pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 120W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3P |
Package / Case | TO-3P-3, SC-65-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SK1518-E Weight | Contact Us |
Replacement Part Number | 2SK1518-E-FT |
RQ3E100BNTB
Rohm Semiconductor
RQ3E100MNTB1
Rohm Semiconductor
RQ3E120GNTB
Rohm Semiconductor
RQ3E130MNTB1
Rohm Semiconductor
RQ3E150GNTB
Rohm Semiconductor
RQ3E180GNTB
Rohm Semiconductor
RQ3E070BNTB
Rohm Semiconductor
RQ3E080BNTB
Rohm Semiconductor
RQ3E080GNTB
Rohm Semiconductor
RQ3E100GNTB
Rohm Semiconductor
EP1C6T144C6
Intel
LCMXO2-1200ZE-3TG144IR1
Lattice Semiconductor Corporation
A42MX09-FVQ100
Microsemi Corporation
EP4CE10E22C7N
Intel
XC5VLX30-1FF676I
Xilinx Inc.
AGL600V2-FG144
Microsemi Corporation
LCMXO2-7000HC-6BG256C
Lattice Semiconductor Corporation
LFXP2-8E-5MN132C
Lattice Semiconductor Corporation
5AGXMA1D4F31I3N
Intel
EP4CE55F29C6
Intel