Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / 2SJ652-1E
Manufacturer Part Number | 2SJ652-1E |
---|---|
Future Part Number | FT-2SJ652-1E |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2SJ652-1E Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 28A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
Rds On (Max) @ Id, Vgs | 38 mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4360pF @ 20V |
FET Feature | - |
Power Dissipation (Max) | 2W (Ta), 30W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F-3SG |
Package / Case | TO-220-3 Full Pack |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SJ652-1E Weight | Contact Us |
Replacement Part Number | 2SJ652-1E-FT |
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