Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2SD12690P
Manufacturer Part Number | 2SD12690P |
---|---|
Future Part Number | FT-2SD12690P |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2SD12690P Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 4A |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 150mA, 3A |
Current - Collector Cutoff (Max) | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 130 @ 1A, 2V |
Power - Max | 2W |
Frequency - Transition | 30MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Supplier Device Package | TO-220F-A1 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SD12690P Weight | Contact Us |
Replacement Part Number | 2SD12690P-FT |
2SA1837,WNLF(J
Toshiba Semiconductor and Storage
2SA1837,YHF(J
Toshiba Semiconductor and Storage
2SA1837,YHF(M
Toshiba Semiconductor and Storage
2SA1869-Y(JKT,Q,M)
Toshiba Semiconductor and Storage
2SA1869-Y(Q,M)
Toshiba Semiconductor and Storage
2SA1869-Y,MTSAQ(J
Toshiba Semiconductor and Storage
2SA1869-Y,Q(J
Toshiba Semiconductor and Storage
2SA1887(F)
Toshiba Semiconductor and Storage
2SA1930(LBS2MATQ,M
Toshiba Semiconductor and Storage
2SA1930(ONK,Q,M)
Toshiba Semiconductor and Storage
A3P060-VQG100T
Microsemi Corporation
AT6005-4AC
Microchip Technology
EP4CGX30CF23C6
Intel
EP4CE6F17A7N
Intel
EP3C10U256C8
Intel
5SGXEA5K1F40I2N
Intel
5SGSED8K3F40C2LN
Intel
5SGSMD4K2F40I3LN
Intel
A42MX09-TQ176
Microsemi Corporation
LFE2-35E-5F672C
Lattice Semiconductor Corporation