Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2SC5706-P-E
Manufacturer Part Number | 2SC5706-P-E |
---|---|
Future Part Number | FT-2SC5706-P-E |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2SC5706-P-E Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 5A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 240mV @ 100mA, 2A |
Current - Collector Cutoff (Max) | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
Power - Max | 800mW |
Frequency - Transition | 400MHz |
Operating Temperature | - |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package | TP |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SC5706-P-E Weight | Contact Us |
Replacement Part Number | 2SC5706-P-E-FT |
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