Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2SC555600L
Manufacturer Part Number | 2SC555600L |
---|---|
Future Part Number | FT-2SC555600L |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2SC555600L Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 80mA |
Voltage - Collector Emitter Breakdown (Max) | 10V |
Vce Saturation (Max) @ Ib, Ic | - |
Current - Collector Cutoff (Max) | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 20mA, 8V |
Power - Max | 300mW |
Frequency - Transition | 6GHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | Mini3-G1 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SC555600L Weight | Contact Us |
Replacement Part Number | 2SC555600L-FT |
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