Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2SB817C-1E
Manufacturer Part Number | 2SB817C-1E |
---|---|
Future Part Number | FT-2SB817C-1E |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2SB817C-1E Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 12A |
Voltage - Collector Emitter Breakdown (Max) | 140V |
Vce Saturation (Max) @ Ib, Ic | 2V @ 500mA, 5A |
Current - Collector Cutoff (Max) | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 5V |
Power - Max | 120W |
Frequency - Transition | 10MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Supplier Device Package | TO-3P-3L |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SB817C-1E Weight | Contact Us |
Replacement Part Number | 2SB817C-1E-FT |
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