Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2SA2012-TD-E
Manufacturer Part Number | 2SA2012-TD-E |
---|---|
Future Part Number | FT-2SA2012-TD-E |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2SA2012-TD-E Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 5A |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Vce Saturation (Max) @ Ib, Ic | 210mV @ 30mA, 1.5A |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
Power - Max | 3.5W |
Frequency - Transition | 420MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-243AA |
Supplier Device Package | PCP |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SA2012-TD-E Weight | Contact Us |
Replacement Part Number | 2SA2012-TD-E-FT |
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