Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2SA1179N6-TB-E
Manufacturer Part Number | 2SA1179N6-TB-E |
---|---|
Future Part Number | FT-2SA1179N6-TB-E |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2SA1179N6-TB-E Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 150mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 135 @ 1mA, 6V |
Power - Max | 200mW |
Frequency - Transition | 180MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | 3-CP |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SA1179N6-TB-E Weight | Contact Us |
Replacement Part Number | 2SA1179N6-TB-E-FT |
SMMBTA06LT1G
ON Semiconductor
CPH3205-M-TL-E
ON Semiconductor
MMBT6427LT1G
ON Semiconductor
NSS40200LT1G
ON Semiconductor
NSV20201LT1G
ON Semiconductor
SBC848BLT1G
ON Semiconductor
SBCW30LT1G
ON Semiconductor
BC817-16LT3G
ON Semiconductor
BCW68GLT3G
ON Semiconductor
MMBT5087LT3G
ON Semiconductor
LCMXO2-1200ZE-1TG100CR1
Lattice Semiconductor Corporation
M1A3P1000-2FGG484
Microsemi Corporation
A3P1000-FG256
Microsemi Corporation
A3P600-2PQG208I
Microsemi Corporation
LFE5UM-85F-7BG554I
Lattice Semiconductor Corporation
EP20K600EFC672-3
Intel
5SGSED8K3F40C2LN
Intel
EP3SE80F1152I3
Intel
XA7A50T-1CSG324I
Xilinx Inc.
EPF10K200SBC356-1X
Intel