Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2PD602AS,115
Manufacturer Part Number | 2PD602AS,115 |
---|---|
Future Part Number | FT-2PD602AS,115 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2PD602AS,115 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
Current - Collector Cutoff (Max) | 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 170 @ 150mA, 10V |
Power - Max | 250mW |
Frequency - Transition | 180MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SMT3; MPAK |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2PD602AS,115 Weight | Contact Us |
Replacement Part Number | 2PD602AS,115-FT |
BC807-25-TP
Micro Commercial Co
BC846B-TP
Micro Commercial Co
BC857AE6327HTSA1
Infineon Technologies
BC857B-TP
Micro Commercial Co
FJV1845FMTF
ON Semiconductor
KSA1298YMTF
ON Semiconductor
MMBT4401-TP
Micro Commercial Co
TBC847B,LM
Toshiba Semiconductor and Storage
2SC4116-O(TE85L,F)
Toshiba Semiconductor and Storage
2SC57250SL
Panasonic Electronic Components
XA7A100T-1FGG484I
Xilinx Inc.
A3PE600-1FG484I
Microsemi Corporation
EP4CE10F17C8LN
Intel
5SGXEA4H2F35C1N
Intel
EP3SE110F1152C2N
Intel
XCS10XL-5PC84C
Xilinx Inc.
XC4VLX25-11FFG676I
Xilinx Inc.
M2GL060T-FGG676
Microsemi Corporation
LFE3-70E-6FN1156C
Lattice Semiconductor Corporation
EP1S60B956C7
Intel