Manufacturer Part Number | 2N7000G |
---|---|
Future Part Number | FT-2N7000G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2N7000G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 5 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 350mW (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-92-3 |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2N7000G Weight | Contact Us |
Replacement Part Number | 2N7000G-FT |
ZVN4310A
Diodes Incorporated
DN2530N3-G
Microchip Technology
LND150N3-G
Microchip Technology
TP2104N3-G
Microchip Technology
TN0104N3-G
Microchip Technology
LP0701N3-G
Microchip Technology
VN0106N3-G
Microchip Technology
VP2206N3-G
Microchip Technology
DN2535N3-G
Microchip Technology
VN0550N3-G
Microchip Technology